* RDS(on)=20mΩ@VGS=-10V, ID=-9.1A
* RDS(on)=35mΩ@VGS=-4.5V, ID=-6.9A
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resi.

or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or.

H4422S

H445CHXX

H445VAN01.0

H446TAN03.0

H4001

H4005

H4006

H40517MN

H40518MN

H40519MN

H40519MN-R

H40520MN

H40520MN-R

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